PHOTOTRANSISTOR CHIP FT050
產(chǎn)品類別:220V系列
點(diǎn)擊數(shù):77
PHOTOTRANSISTOR CHIP
FT050
GENERAL DESCRIPTION
The FT050 chip is fabricated using Silicon Bipolar
process technology. This chip is designed to be
used in optocouplers.
FEATURES
• Low Saturation 0.2 V
• High Breakdown Voltage 220 V
• Chip Size – 1.1 x 1.15 mm
• Chip Thickness – 0.36 mm ±0.02mm
• Top Contact Metal – Aluminum
• Bottom Contact Metal (collector)- CrNi
ABSOLUTE MAXIMUM RATINGS
CHIP TOPOGRAPHY
Operating junction
temperature
-60°C to 85°C
Collector-Emitter voltage 220 V
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Symbol Characteristic Min Typ Max unit
BVceol Breakdown voltage collector-emitter 220 - - V Ice=10 mA
BVeb Breakdown voltage emitter-collector 7.0 - - V Iec=50 ?A
Ice0 Collector-emitter dark current - - 1 мкA Vce=250 V
Vcesat Collector-emitter saturation voltage - 0.2 0.4 V Ic=2 mA, *
h fe Current transfer ratio 60 - - Vce=5 V, Ib=150 ?A
* IR irradience of chip E = 20 mW/cm 2 . Peak wavelength λ = 850±20 nm.
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